?2000 fairchild semiconductor international rev. e, september 2000 FYPF2004DN schottky barrier rectifier absolute maximum ratings (per diode) t c =25 c unless otherwise noted thermal characteristics electrical characteristics (per diode) * pulse test: pulse width=300 s, duty cycle = 2% symbol parameter value units v rrm maximum repetitive reverse voltage 40 v v r maximum dc reverse voltage 40 v i f(av) maximum average rectified current @ t c = 115 c20 a i fsm maximum forward surge current (per diode) 60hz single half-sine wave 150 a t j, t stg operating junction and storage temperature -40 to +150 c symbol parameter value units r jc maximum thermal resistance, junction to case (per diode) 3.5 c/w symbol parameter value units v fm * maximum instantaneous forward voltage i f = 10a i f = 10a i f = 20a i f = 20a t c = 25 c t c = 125 c t c = 25 c t c = 125 c 0.55 0.49 0.67 0.65 v i rm * maximum instantaneous reverse current @ rated v r t c = 25 c t c = 125 c 1 80 ma FYPF2004DN features ? low forward voltage drop high frequency properties and switching speed guard ring for over-voltage protection applications switched mode power supply freewheeling diodes to-220f 1 2 3 1. anode 2.cat hode 3. anode
?2000 fairchild semiconductor international rev. e, september 2000 FYPF2004DN typical characteristics figure 1. typical forward voltage characteristics (per diode) figure 3. typical junction capacitance (per diode) figure 5. forward current derating curve figure 2. typical reverse current vs. reverse voltage (per diode) figure 4. thermal impedance characteristics (per diode) figure 6. non-repetive surge current (per diode) 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 t j =125 o c t j =75 o c t j =25 o c forward voltage drop, v f [v] forward current, i f [a] 0 10203040 200 300 400 500 600 700 800 900 1000 t j =25 o c juntion capacitance, c j [pf] reverse voltage, v r [v] 0 20406080100120140160 0 5 10 15 20 25 dc average forward current, i f(av) [a] case temperature, t c [ o c] 0 10203040 0.001 0.01 0.1 1 10 100 t j =150 o c t j =125 o c t j =75 o c t j =25 o c reverse current, i r [ma] reverse voltage, v r [v] 100 1m 10m 100m 1 10 0.1 1 10 transient thermal impedance [ o c/w] pulse duration [s] 110100 0 20 40 60 80 100 120 140 160 180 max. forward surge current, i fsm [a] number of cycles @ 60hz
?2000 fairchild semiconductor international rev. e, september 2000 FYPF2004DN package dimensions dimensions in millimeters to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ? 3.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ? 0.05
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